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    DISPLAY APPARATUS
    1.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20240334736A1

    公开(公告)日：2024-10-03

    申请号：US18575411

    申请日：2022-06-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yukinori SHIMA ,  Koji ONO ,  Masataka NAKADA ,  Rai SATO ,  Hiroki ADACHI

    IPC: H10K50/813 ,  H10K59/131

    CPC classification number: H10K50/813 ,  H10K59/131

    Abstract: A display apparatus with high detection sensitivity of an image capturing function and high display quality is provided. The display apparatus includes a light-receiving device; a first light-emitting device including a first lower electrode whose end portion has a first tapered shape and a first organic compound layer having a shape along the first tapered shape; a second light-emitting device including a second lower electrode whose end portion has a second tapered shape and a second organic compound layer having a shape along the second tapered shape; a common electrode included in the first light-emitting device and the second light-emitting device; an insulating layer positioned between the first light-emitting device and the second light-emitting device and between the second light-emitting device and the light-receiving device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring is positioned over the common electrode and includes a region overlapping with the insulating layer.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    2.
    发明公开
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240038777A1

    公开(公告)日：2024-02-01

    申请号：US18224383

    申请日：2023-07-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masakatsu OHNO ,  Masataka NAKADA ,  Yukinori SHIMA ,  Masayoshi DOBASHI ,  Junichi KOEZUKA ,  Masami JINTYOU

    IPC: H01L27/12

    CPC classification number: H01L27/124 ,  H01L27/1259 ,  H01L2933/0066 ,  H01L33/62

    Abstract: To provide a semiconductor device that occupies a small area. The semiconductor device includes a first conductive layer, first to fifth insulating layers, and a second conductive layer that are stacked in this order and further includes a semiconductor layer, a third conductive layer, and a sixth insulating layer. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surfaces of the first to fifth insulating layers, and the second conductive layer. The sixth insulating layer is over the semiconductor layer. The third conductive layer is over the sixth insulating layer and overlaps with the semiconductor layer with the sixth insulating layer between the third conductive layer and the semiconductor layer. The first insulating layer includes a region having a higher hydrogen content than the second insulating layer. The fifth insulating layer includes a region having a higher hydrogen content than the fourth insulating layer. The third insulating layer contains oxygen.

    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE
    3.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE 有权

    公开(公告)号：US20220350213A1

    公开(公告)日：2022-11-03

    申请号：US17863575

    申请日：2022-07-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Kenichi OKAZAKI ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA

    IPC: G02F1/1362 ,  G02F1/1368

    Abstract: The manufacturing yield of a display device is improved. The resistance of a display device to ESD is increased. The display device includes a substrate, a display portion, a connection terminal, a first wiring, and a second wiring. The first wiring is electrically connected to the connection terminal and includes a portion positioned between the connection terminal and the display portion. The second wiring is electrically connected to the connection terminal, is positioned between the connection terminal and an end portion of the substrate, and includes a portion in which a side surface is exposed at an end portion of the substrate. The display portion includes a transistor. The transistor includes a semiconductor layer, a gate insulating layer, and a gate electrode. The semiconductor layer and the second wiring include a metal oxide.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220013667A1

    公开(公告)日：2022-01-13

    申请号：US17288675

    申请日：2019-10-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masataka NAKADA ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Takumi SHIGENOBU

    IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The first insulating layer covers a top surface and a side surface of the semiconductor layer, and the conductive layer is positioned over the first insulating layer. The metal oxide layer is positioned between the first insulating layer and the conductive layer, and an end portion of the metal oxide layer is positioned on an inner side than an end portion of the conductive layer. The insulating region is positioned adjacent to the metal oxide layer and positioned between the first insulating layer and the conductive layer. Furthermore, the semiconductor layer includes a first region, a pair of second regions, and a pair of third regions. The first region overlaps with the metal oxide layer and the conductive layer. The second regions are positioned to put the first region sandwiched therebetween and to overlap with the insulating region and the conductive layer. The third regions are positioned to the first region and the pair of second regions sandwiched therebetween and not to overlap with the conductive layer. The third regions preferably include a portion having lower resistance than the first region. The second regions preferably include a portion having higher resistance than the third regions.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190355764A1

    公开(公告)日：2019-11-21

    申请号：US16522912

    申请日：2019-07-26

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

    IPC: H01L27/12 ,  H01L29/786

    Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

    Semiconductor Device, Manufacturing Method Thereof, Module, and Electronic Device
    7.
    发明申请
    Semiconductor Device, Manufacturing Method Thereof, Module, and Electronic Device 有权
    半导体器件及其制造方法，模块和电子器件

    公开(公告)号：US20150221679A1

    公开(公告)日：2015-08-06

    申请号：US14612817

    申请日：2015-02-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

    IPC: H01L27/12

    CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/60 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

    Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.

    Abstract translation: 半导体器件包括晶体管和电容器。 晶体管包括第一导电膜; 包括含有氢的膜的第一绝缘膜; 包括氧化物绝缘膜的第二绝缘膜; 包括第一区域和一对第二区域的氧化物半导体膜; 一对电极; 栅极绝缘膜; 和第二导电膜。 电容器包括下电极，电极间绝缘膜和上电极。 下电极含有与第一导电膜相同的材料。 电极间绝缘膜包括含有与第一绝缘膜相同的材料的第三绝缘膜和含有与栅极绝缘膜相同的材料的第四绝缘膜。 上部电极含有与第二导电膜相同的材料。 在晶体管上提供包含氢的第五绝缘膜。

    DISPLAY APPARATUS
    9.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20250098439A1

    公开(公告)日：2025-03-20

    申请号：US18729577

    申请日：2023-01-17

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

    IPC: H10K59/124 ,  H10K59/123

    Abstract: A display apparatus with high definition is provided. The display apparatus includes a transistor, a light-emitting device and a first insulating layer. The transistor includes a semiconductor layer, first to third conductive layers, and second and third insulating layers. The second insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the second insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with the top surface of the first conductive layer, the side surface of the second insulating layer, and the top surface and the side surface of the second conductive layer. The third insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the third insulating layer. The first insulating layer is provided over the transistor. The first insulating layer and the third insulating layer include a third opening reaching the second conductive layer. The light-emitting device is provided over the first insulating layer and includes a pixel electrode, a common electrode, and an EL layer. The pixel electrode is electrically connected to the second conductive layer through the third opening. The EL layer includes a region in contact with the top surface and the side surface of the pixel electrode.

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