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公开(公告)号：US20190044019A1
公开(公告)日：2019-02-07
申请号：US16152596
申请日：2018-10-05
Applicant: SENSL TECHNOLOGIES LTD.
Inventor： Kevin O'NEILL , Liam WALL , John Carlton JACKSON
IPC: H01L31/107 , H01L27/146 , H01L31/0232
Abstract: A semiconductor photomultiplier includes a microcell, a photosensitive diode, and an anti-reflective coating. The microcell has an insulating layer formed over an active region. The photosensitive diode is formed in the active region beneath the insulating layer. The anti-reflective coating is provided on the insulating layer.
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