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    NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE NONVOLATILE MEMORY DEVICE INCLUDING GIVING AN UPPER PORTION OF AN INSULATING LAYER AN ETCHING SELECTIVITY WITH RESPECT TO A LOWER PORTION
    1.
    发明申请
    NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE NONVOLATILE MEMORY DEVICE INCLUDING GIVING AN UPPER PORTION OF AN INSULATING LAYER AN ETCHING SELECTIVITY WITH RESPECT TO A LOWER PORTION 失效
    非易失性存储器件和形成非易失性存储器件的方法，包括提供绝缘层的上部分与较低部分的蚀刻选择性

    公开(公告)号：US20120302053A1

    公开(公告)日：2012-11-29

    申请号：US13571502

    申请日：2012-08-10

    申请人： SEUNG-JUN LEE ,  WOON-KYUNG LEE

    发明人： SEUNG-JUN LEE ,  WOON-KYUNG LEE

    IPC分类号： H01L21/283

    CPC分类号： H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

    摘要： A nonvolatile memory device and a method of forming a nonvolatile memory device are provided. The nonvolatile memory device includes an active region of a semiconductor substrate defined by a device isolation layer, a tunnel insulating structure disposed on the active region, and a charge storage structure disposed on the tunnel insulating structure. The nonvolatile memory device also includes a gate interlayer dielectric layer disposed on the charge storage structure, and a control gate electrode disposed on the gate interlayer dielectric layer. The charge storage structure includes an upper charge storage structure and a lower charge storage structure, and the upper charge storage structure has a higher impurity concentration than the lower charge storage structure.

    摘要翻译： 提供了非易失性存储器件和形成非易失性存储器件的方法。 非易失性存储器件包括由器件隔离层限定的半导体衬底的有源区，设置在有源区上的隧道绝缘结构，以及设置在隧道绝缘结构上的电荷存储结构。 非易失性存储器件还包括设置在电荷存储结构上的栅极层间介质层和设置在栅极层间介质层上的控制栅电极。 电荷存储结构包括上电荷存储结构和较低电荷存储结构，并且上电荷存储结构具有比下电荷存储结构更高的杂质浓度。