公开(公告)号：US20230010525A1

公开(公告)日：2023-01-12

申请号：US17488664

申请日：2021-09-29

申请人： SHANDONG UNIVERSITY

发明人： Shishen YAN ,  Yufeng TIAN ,  Yanxue CHEN ,  Lihui BAI ,  Tie ZHOU ,  Xuejie XIE

IPC分类号： H01L43/04 ,  H01L27/22 ,  H01L43/06

摘要： Disclosed are an artificial antiferromagnetic structure and a storage element. The artificial antiferromagnetic structure includes a first metal layer, an artificially synthesized antiferromagnetic layer and a second metal layer that are stacked in sequence, wherein there is an interfacial DM (Dzyaloshinskii-Moriya) interaction at an interface between the metal layer and the artificially synthesized antiferromagnetic layer, such that there is a first interfacial DM interaction between the first metal layer and the artificially synthesized antiferromagnetic layer, there is a second interfacial DM interaction between the second metal layer and the artificially synthesized antiferromagnetic layer, and the first interfacial DM interaction is different from the second interfacial DM interaction. The artificially synthesized antiferromagnetic layer forms a stable chiral Néel magnetic domain wall due to a strong interfacial DM interaction.