Method for correcting anomalous pixel and apparatus

    公开(公告)号:US12211177B2

    公开(公告)日:2025-01-28

    申请号:US17586045

    申请日:2022-01-27

    Abstract: A method for correcting the anomalous pixel includes: calculating a matching index of pixels in a first point cloud map and a second point cloud map; finding out an anomalous pixel based on the matching index of the pixels and a correction threshold; and calculating a correction column difference, and correcting the anomalous pixel based on the correction column difference and the matching index of the pixels. The anomalous pixel in the point cloud map is retained and corrected, thus the pixel integrity of an image is guaranteed; and a mode for correcting the anomalous pixel is simple, requires fewer calculating steps, and exhibits high anomalous pixel correction efficiency. An apparatus for the same purpose includes a first camera, a second camera, an image processing unit, an indexing unit, a calculating unit, a judging unit, and a correction execution unit.

    Metal interconnection structure and manufacturing method thereof

    公开(公告)号:US12198980B2

    公开(公告)日:2025-01-14

    申请号:US17570563

    申请日:2022-01-07

    Abstract: The present invention provides a metal interconnection structure and a manufacturing method thereof, the metal interconnection structure includes: metal interconnection lines disposed at intervals, first metal layers respectively disposed on the metal interconnection lines; second metal layers respectively disposed on the first metal layers; dielectric layers disposed on both sides of the first metal layer and the second metal layer and having a gap with both the first metal layer and the second metal layer; and a metal diffusion covering layer covering the dielectric layer and the second metal layer. In the present invention, by disposing the dielectric layer on both sides of the first metal layer and the second metal layer, and the dielectric layer has a gap with both the first metal layer and the second metal layer, and the formed metal interconnection structure reduces parasitic capacitance due to the gap, and the gaps existing between the first metal layer and the dielectric layer and between the second metal layer and the dielectric layer can further reduce the diffusion of metal ions to the dielectric layer.

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