公开(公告)号：US20200091221A1

公开(公告)日：2020-03-19

申请号：US16568844

申请日：2019-09-12

Applicant: SHARP KABUSHIKI KAISHA

Inventor： MAKOTO NAKAZAWA ,  FUMIKI NAKANO ,  RIKIYA TAKITA

IPC: H01L27/146 ,  H01L29/786 ,  G01T1/20

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first planarizing film 107, a first inorganic insulating film 108a, and a bias wire 16. The first planarizing film 107 covers the photoelectric conversion element 12 and has a first opening 107h at a position at which the first opening 107h overlaps with the photoelectric conversion element 12 in plan view. The first inorganic insulating film 108a has a second opening on an inner side of the first opening h and covers a surface of the first planarizing film 107. The bias wire 16 is provided on a first inorganic insulating film 108a and is connected to the photoelectric conversion element 12 via the second opening CH2.

公开(公告)号：US20210391374A1

公开(公告)日：2021-12-16

申请号：US17341894

申请日：2021-06-08

Applicant: SHARP KABUSHIKI KAISHA

Inventor： HIROYUKI MORIWAKI ,  MAKOTO NAKAZAWA ,  TETSUYA TANISHIMA ,  RIKIYA TAKITA

IPC: H01L27/146 ,  H01L29/786 ,  G01T1/20

Abstract: A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

公开(公告)号：US20220392946A1

公开(公告)日：2022-12-08

申请号：US17752047

申请日：2022-05-24

Applicant: SHARP KABUSHIKI KAISHA

Inventor： FUMIKI NAKANO ,  MAKOTO NAKAZAWA ,  HIROYUKI MORIWAKI ,  RIKIYA TAKITA

IPC: H01L27/146 ,  G01T1/20 ,  H04N5/32

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

公开(公告)号：US20220181379A1

公开(公告)日：2022-06-09

申请号：US17536619

申请日：2021-11-29

Applicant: SHARP KABUSHIKI KAISHA

Inventor： RIKIYA TAKITA ,  AKINORI KUBOTA ,  HIROYUKI MORIWAKI ,  MAKOTO NAKAZAWA

IPC: H01L27/146 ,  G01T1/20

Abstract: An X-ray imaging panel includes: a photodiode that converts scintillation light that is obtained from an X-ray that passes through an object into a signal; a first thin-film transistor; a first insulating film that covers at least a part of the first thin-film transistor and that has a first opening above the first thin-film transistor; a lower electrode that is disposed below the photodiode, that covers at least a part of the first insulating film, that is formed in the first opening of the first insulating film, and that is connected to the first thin-film transistor in the first opening; and a second insulating film that is disposed above the lower electrode and that is formed in the first opening. The photodiode covers the first opening in which the second insulating film is formed, and the photodiode is connected to the lower electrode.

公开(公告)号：US20210013251A1

公开(公告)日：2021-01-14

申请号：US16923753

申请日：2020-07-08

Applicant: SHARP KABUSHIKI KAISHA

Inventor： RIKIYA TAKITA ,  AKINORI KUBOTA ,  FUMIKI NAKANO

IPC: H01L27/146

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

公开(公告)号：US20200091222A1

公开(公告)日：2020-03-19

申请号：US16568855

申请日：2019-09-12

Applicant: SHARP KABUSHIKI KAISHA

Inventor： MAKOTO NAKAZAWA ,  FUMIKI NAKANO ,  RIKIYA TAKITA

IPC: H01L27/146 ,  H01L29/786 ,  G01T1/20

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first inorganic insulating film 106, a first planarizing film 107, and a second inorganic insulating film 108a and/or 109 on a substrate 101. The first inorganic insulating film 106, the first planarizing film 107, and the second inorganic insulating film 108a and/or 109 are provided up to an end P2 of the substrate. The first inorganic insulating film 106 covers a surface of the photoelectric conversion element 12, the first planarizing film 107 has a tapered portion, and an angle θ between the tapered portion and the first inorganic insulating film 106 is an acute angle. The second inorganic insulating film 108a and/or 109 covers the first planarizing film 107.

公开(公告)号：US20200057169A1

公开(公告)日：2020-02-20

申请号：US16539199

申请日：2019-08-13

Applicant: SHARP KABUSHIKI KAISHA

Inventor： FUMIKI NAKANO ,  MAKOTO NAKAZAWA ,  HIROYUKI MORIWAKI ,  RIKIYA TAKITA

IPC: G01T1/24 ,  G01T1/20 ,  G01T1/29 ,  H01L27/146

Abstract: An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

公开(公告)号：US20200035746A1

公开(公告)日：2020-01-30

申请号：US16521948

申请日：2019-07-25

Applicant: SHARP KABUSHIKI KAISHA

Inventor： RIKIYA TAKITA ,  FUMIKI NAKANO ,  MAKOTO NAKAZAWA

IPC: H01L27/146 ,  H01L27/30

Abstract: An imaging panel includes an active matrix substrate that has a plurality of pixels each provided with a photoelectric conversion element, and the pixels each include a first electrode provided at a first surface of the photoelectric conversion element, a first flattening film provided above the photoelectric conversion element and the first electrode, and a bias conductive part provided below the first flattening film. The bias conductive part is connected to the first electrode and applies bias voltage to the first electrode. The first flattening film has no opening in a region overlapped with a pixel region.