公开(公告)号：US20220293648A1

公开(公告)日：2022-09-15

申请号：US17677303

申请日：2022-02-22

Applicant: SHARP KABUSHIKI KAISHA

Inventor： FUMIKI NAKANO

IPC: H01L27/146

Abstract: A photoelectric conversion device includes a photoelectric conversion area in which photoelectric conversion elements each including a first electrode, a second electrode, and a photoelectric conversion layer, provided between the first electrode and the second electrode, that contains a semiconductor material are provided in a matrix and a guard ring surrounding a periphery of the photoelectric conversion area in a form of a frame. The guard ring has an intermediate layer containing the same semiconductor material as the photoelectric conversion layer.

公开(公告)号：US20220392946A1

公开(公告)日：2022-12-08

申请号：US17752047

申请日：2022-05-24

Applicant: SHARP KABUSHIKI KAISHA

Inventor： FUMIKI NAKANO ,  MAKOTO NAKAZAWA ,  HIROYUKI MORIWAKI ,  RIKIYA TAKITA

IPC: H01L27/146 ,  G01T1/20 ,  H04N5/32

Abstract: A photoelectric conversion device according to one embodiment includes a first transistor and a first photoelectric conversion element disposed on a first region, a second transistor disposed on a second region, an insulating layer that covers the first transistor, the first photoelectric conversion element, and the second transistor, and a first terminal that is disposed on the insulating layer, is electrically connected to one of the first transistor and the first photoelectric conversion element, and is connectable to an outside. The second transistor is a dummy transistor of the first transistor.

公开(公告)号：US20210013251A1

公开(公告)日：2021-01-14

申请号：US16923753

申请日：2020-07-08

Applicant: SHARP KABUSHIKI KAISHA

Inventor： RIKIYA TAKITA ,  AKINORI KUBOTA ,  FUMIKI NAKANO

IPC: H01L27/146

Abstract: An active matrix substrate includes a pixel region including a plurality of pixels over a substrate and a frame region outside the pixel region. In the plurality of pixels, a plurality of photoelectric conversion elements are provided. In the frame region, an antistatic hole is provided. The pixel region and a portion of the frame region are covered with an insulating film, and the antistatic hole is bored through the insulating film. An antistatic wire is provided in the frame region so as to surround the pixel region, and has a surface exposed in the antistatic hole.

公开(公告)号：US20180138205A1

公开(公告)日：2018-05-17

申请号：US15579178

申请日：2016-06-02

Applicant: SHARP KABUSHIKI KAISHA

Inventor： TADAYOSHI MIYAMOTO ,  FUMIKI NAKANO

IPC: H01L27/12 ,  H01L27/146

CPC classification number: H01L27/124 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14692 ,  H01L27/3279 ,  H01L29/7869

Abstract: Provided is an active-matrix substrate in which the line resistance is decreased. The active-matrix substrate includes a substrate 31, a plurality of gate lines Gj disposed on the substrate 31 and extending in a first direction, a plurality of source lines Si disposed on the substrate 31 and extending in a second direction different from the first direction, a transistor 2 disposed correspondingly to each of intersection points of the gate lines and the source lines Si and connected to a corresponding one of the gate lines Gj and a corresponding one of the source lines Si, an insulating layer, and extended conductive films 51, 52, and 61. At least ones of the gate lines Gj and the source lines Si each have a layered structure with connection to the extended conductive film via a contact hole provided in the insulating layer.

公开(公告)号：US20200313429A1

公开(公告)日：2020-10-01

申请号：US16831604

申请日：2020-03-26

Applicant: SHARP KABUSHIKI KAISHA

Inventor： HIROYUKI MORIWAKI ,  MAKOTO NAKAZAWA ,  AKINORI KUBOTA ,  FUMIKI NAKANO

IPC: H02H9/04 ,  H01L27/146 ,  G01T1/20 ,  G01T1/208

Abstract: An imaging panel includes multiple photoelectric conversion elements respectively mounted in multiple pixels defined by multiple gate lines and data lines formed on a substrate. The imaging panel further includes, outside pixel regions defined by the pixels, multiple first non-linear elements respectively connected to the data lines, multiple first protective wiring respectively connected to the data lines, and a first common wiring connected to the first non-linear elements. Each of the first non-linear elements is connected in a reverse-biased state between the data line connected to the first non-linear element and the first common wiring. Each of the first protective wiring extends to the edge of the substrate.

公开(公告)号：US20200091221A1

公开(公告)日：2020-03-19

申请号：US16568844

申请日：2019-09-12

Applicant: SHARP KABUSHIKI KAISHA

Inventor： MAKOTO NAKAZAWA ,  FUMIKI NAKANO ,  RIKIYA TAKITA

IPC: H01L27/146 ,  H01L29/786 ,  G01T1/20

Abstract: An active matrix substrate includes a photoelectric conversion element 12, a first planarizing film 107, a first inorganic insulating film 108a, and a bias wire 16. The first planarizing film 107 covers the photoelectric conversion element 12 and has a first opening 107h at a position at which the first opening 107h overlaps with the photoelectric conversion element 12 in plan view. The first inorganic insulating film 108a has a second opening on an inner side of the first opening h and covers a surface of the first planarizing film 107. The bias wire 16 is provided on a first inorganic insulating film 108a and is connected to the photoelectric conversion element 12 via the second opening CH2.

公开(公告)号：US20190237692A1

公开(公告)日：2019-08-01

申请号：US16261457

申请日：2019-01-29

Applicant: SHARP KABUSHIKI KAISHA

Inventor： MAKOTO NAKAZAWA ,  KAZUHIDE TOMIYASU ,  FUMIKI NAKANO ,  YU NAKAMURA

IPC: H01L51/44 ,  H01L27/30

CPC classification number: H01L51/448 ,  H01L27/1225 ,  H01L27/286 ,  H01L27/307 ,  H01L27/308

Abstract: The invention provides a technique inhibiting entry of moisture to an active matrix substrate included in an X-ray imaging device.An active matrix substrate includes, in each of the pixels, a photoelectric conversion element including a pair of electrodes and a semiconductor layer provided between the pair of electrodes, a first flattening film configured as an organic resin film and covering the photoelectric conversion element, and a first inorganic insulating film covering the first flattening film. The first flattening film and the first inorganic insulating film are provided to extend outside the pixel region. Outside the pixel region, the first flattening film is covered with the first inorganic insulating film to prevent exposure of the first flattening film.

公开(公告)号：US20180226266A1

公开(公告)日：2018-08-09

申请号：US15579177

申请日：2016-06-02

Applicant: SHARP KABUSHIKI KAISHA

Inventor： TADAYOSHI MIYAMOTO ,  FUMIKI NAKANO

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L27/146 ,  H01L29/786

CPC classification number: H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/53204 ,  H01L23/5329 ,  H01L27/146 ,  H01L29/786 ,  H04N21/435 ,  H04N21/439 ,  H04N21/44 ,  H04N21/462 ,  H04N21/4884 ,  H04N21/8456

Abstract: An active matrix substrate includes a substrate 31; gate lines arranged on the substrate 31 and extend in a first direction; source lines Si arranged on the substrate 31 and extend in a second direction that is different from the first direction; transistors 2 arranged in correspondence to points of intersection between the gate lines and the source lines, respectively, and are connected with the gate lines and the source lines; and an insulating layer. At least either the gate lines and the source lines are connected with electrodes of the transistors via contact holes in the insulating layer, and are formed to satisfy at least either i) having a greater film thickness or ii) being formed with a material having a smaller specific resistance, as compared with the electrodes of the transistors to which the lines are connected via the contact holes in the insulating layer.

公开(公告)号：US20180166478A1

公开(公告)日：2018-06-14

申请号：US15579555

申请日：2016-06-02

Applicant: SHARP KABUSHIKI KAISHA

Inventor： FUMIKI NAKANO ,  TADAYOSHI MIYAMOTO

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/124 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14692 ,  H01L29/786

Abstract: A photosensor substrate includes: a substrate 31; gate lines arranged on the substrate 31 and extend in a first direction; source lines Si arranged on the substrate 31 and extend in a second direction; transistors arranged in correspondence to points of intersection between the source lines and the gate lines, respectively, and are connected therewith; an insulating layer that covers the transistors; photoelectric conversion elements 4 arranged in correspondence to the points of intersection between the source lines and the gate lines, and are connected with the transistors via first contact holes CH3 in the insulating layer, and bias lines 8 that extend in the second direction, and are connected with the photoelectric conversion elements 4. The source lines are connected with the transistors via second contact holes CH2 in the insulating layer, and have a line width greater than a line width of the bias lines 8.

公开(公告)号：US20200279873A1

公开(公告)日：2020-09-03

申请号：US15998576

申请日：2017-02-13

Applicant: SHARP KABUSHIKI KAISHA

Inventor： TAKATOSHI ORUI ,  MAKOTO NAKAZAWA ,  WATARU NAKAMURA ,  KIYOSHI MINOURA ,  TADASHI OHTAKE ,  FUMIKI NAKANO

IPC: H01L27/12 ,  H01Q3/34 ,  H01Q1/38

Abstract: The scanning antenna (1000) is a scanning antenna in which antenna units (U) are arranged, the scanning antenna including: a TFT substrate (101) including: a first dielectric substrate (1), TFTs, gate bus lines, source bus lines, and patch electrodes (15); a slot substrate (201) including: a second dielectric substrate (51), and a slot electrode (55); a liquid crystal layer (LC) provided between the TFT substrate and the slot substrate; and a reflective conductive plate (65). The slot electrode includes slots (57) arranged in correspondence with the plurality of patch electrodes, and a thickness of the second dielectric substrate (51) is smaller than the thickness of the first dielectric substrate (1) at least in a region where the antenna units (U) are arranged.