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公开(公告)号：US20190355767A1
公开(公告)日：2019-11-21
申请号：US16098441
申请日：2018-09-18
Inventor： Ruijun Zhang , Song Wang
IPC: H01L27/12 , H01L21/268
Abstract: The invention provides a manufacturing method for TFT array substrate and TFT array substrate. The manufacturing method forms a first buffer layer on the substrate; the first buffer layer is disposed with a plurality of arc protrusions or a plurality of arc recesses; then an a-Si layer is formed on the second buffer layer which is formed on the first buffer layer; in the process of forming a polysilicon layer by performing ELA on the a-Si layer, the arc protrusions or the arc recesses can change the optical path of the laser to form an energy gradient in the a-Si layer, so as to increase the grain size in the formed polysilicon layer, reduce the number of grain boundaries, improve the carrier mobility of the TFT device, and improve the electrical properties of the TFT device.
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公开(公告)号：US10600825B2
公开(公告)日：2020-03-24
申请号：US16098441
申请日：2018-09-18
Inventor： Ruijun Zhang , Song Wang
IPC: H01L21/00 , H01L27/12 , H01L21/268
Abstract: The invention provides a manufacturing method for TFT array substrate and TFT array substrate. The manufacturing method forms a first buffer layer on the substrate; the first buffer layer is disposed with a plurality of arc protrusions or a plurality of arc recesses; then an a-Si layer is formed on the second buffer layer which is formed on the first buffer layer; in the process of forming a polysilicon layer by performing ELA on the a-Si layer, the arc protrusions or the arc recesses can change the optical path of the laser to form an energy gradient in the a-Si layer, so as to increase the grain size in the formed polysilicon layer, reduce the number of grain boundaries, improve the carrier mobility of the TFT device, and improve the electrical properties of the TFT device.
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3.发明授权公开(公告)号：US09678243B2
公开(公告)日：2017-06-13
申请号：US14413142
申请日：2014-01-30
Inventor： Song Wang
CPC classification number: G01V8/12 , C03B29/025 , C03B29/08 , G01V9/00
Abstract: A detection device for detecting something existed in the high temperature cavity, for detecting the glass substrate sending into or outing of the high temperature cavity, wherein, the detection device comprises a deflection probe and a detection element, the deflection probe comprises a fixed probe and the deflection probe in the same line, which is assembled at the side wall of the high temperature cavity, when the glass substrate is sending into the high temperature cavity and touching the deflection probe, the deflection probe will be connected with the detection element, the detection element will send out a electrical sensor signal for showing the glass substrate is push into the cavity. Therefore, it can be determined in time that the glass substrate and the other elements are still existed in the high temperature cavity or not with some simple machines or detection elements, the detecting process is timely and accurately.
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