公开(公告)号：US20150296160A1

公开(公告)日：2015-10-15

申请号：US14438260

申请日：2013-10-28

申请人： SHIMADZU CORPORATION ,  TOHOKU UNIVERSITY

发明人： Hideki Tominaga ,  Ryuta Hirose ,  Kenji Takubo ,  Shigetoshi Sugawa ,  Rihito Kuroda

IPC分类号： H04N5/378 ,  H04N5/376

CPC分类号： H04N5/378 ,  H01L27/14609 ,  H04N5/3692 ,  H04N5/3742 ,  H04N5/3765

摘要： A logical gate circuit (5) and four stages of flip flips (4a-4d) are assigned to each pixel (1). A controller (7) inputs four phase identification signals into the logical gate circuit (5) and also inputs a start signal STR into a shift register (4) synchronously with the four mutually different phases defined by the phase identification signals. During one round of scanning all the pixels (1) for a readout control, if an enable signal ENBL is set to “0” while an output of a phase identification circuit (110) is “1”, a charge accumulation time at the pixel (1) concerned becomes equal to a readout period T. If the enable signal ENBL is set to “1” while the output of the phase identification circuit (110) is “1”, electric charges accumulated in a photodiode (11) until that point are entirely discarded, so that the charge accumulation time becomes shorter than the readout period T. Thus, the charge accumulation time at each pixel (1) can be controlled to ensure an adequate SN ratio while avoiding signal saturation at some pixels even if the light source has a bright line at a specific wavelength.

摘要翻译： 逻辑门电路（5）和四级翻盖（4a-4d）被分配给每个像素（1）。 控制器（7）将四个相位识别信号输入到逻辑门电路（5）中，并且与由相位识别信号定义的四个相互不同的相位同步地将起始信号STR输入到移位寄存器（4）中。 在扫描所有像素（1）的一轮扫描读出控制期间，如果在相位识别电路（110）的输出为“1”的情况下使能信号ENBL被设置为“0”，则像素处的电荷累积时间 （1）相当于读出期间T.如果在相位识别电路（110）的输出为“1”的情况下将使能信号ENBL设定为“1”，则在该光电二极管（11）中累积的电荷直到那 点被完全丢弃，使得电荷累积时间变得比读出周期T短。因此，可以控制每个像素（1）处的电荷累积时间，以确保足够的SN比，同时避免某些像素处的信号饱和，即使 光源在特定波长处具有亮线。

公开(公告)号：US09429471B2

公开(公告)日：2016-08-30

申请号：US14388567

申请日：2013-03-26

申请人： SHIMADZU CORPORATION ,  TOHOKU UNIVERSITY

发明人： Hideki Tominaga ,  Ryuta Hirose ,  Kenji Takubo ,  Shigetoshi Sugawa ,  Rihito Kuroda

IPC分类号： H01L27/00 ,  G01J3/28 ,  G02B1/116 ,  H01L27/146 ,  G01J3/02 ,  G01J3/12

CPC分类号： G01J3/2803 ,  G01J3/0213 ,  G01J3/0229 ,  G01J2003/123 ,  G01J2003/1234 ,  G01J2003/2806 ,  G02B1/116 ,  H01L27/1462 ,  H01L27/14643

摘要： A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO2 coating layer on the silicon substrate and an Al2O3 coating layer are common to all the photodiodes, while the structure of the upper layers are modified with respect to the wavelength. Within an ultraviolet wavelength region, the coating structure is more finely changed with respect to the wavelength. By such a design, the transmittance can be improved while making the best efforts to avoid a complex manufacturing process.

摘要翻译： 以一维形式排列的多个光电二极管被分成多个组。 对于每组，改变抗反射涂层的结构，使得属于每个组的光电二极管的所有表面被具有透射特性的抗反射涂层覆盖，所述透射特性在其所接收的光的波长范围内显示最大透射率 光电二极管 特别地，硅衬底上的SiO 2涂层和Al 2 O 3涂层对于所有光电二极管是共同的，而上层的结构相对于波长被修饰。 在紫外线波长区域内，涂层结构相对于波长更细微地变化。 通过这样的设计，可以在尽量避免复杂的制造过程的同时，提高透射率。

公开(公告)号：US20150048239A1

公开(公告)日：2015-02-19

申请号：US14388567

申请日：2013-03-26

申请人： SHIMADZU CORPORATION ,  TOHOKU UNIVERSITY

发明人： Hideki Tominaga ,  Ryuta Hirose ,  Kenji Takubo ,  Shigetoshi Sugawa ,  Rihito Kuroda

IPC分类号： G01J3/28 ,  H01L27/146

CPC分类号： G01J3/2803 ,  G01J3/0213 ,  G01J3/0229 ,  G01J2003/123 ,  G01J2003/1234 ,  G01J2003/2806 ,  G02B1/116 ,  H01L27/1462 ,  H01L27/14643

摘要： A plurality of photodiodes arrayed in a one-dimensional form are divided into a plurality of groups. The structure of an antireflection coating is changed for each group so that all the surfaces of the photodiodes belonging to each group are covered with an antireflection coating having a transmittance characteristic which shows a maximum transmittance within a range of wavelengths of light to be received by those photodiodes. In particular, a SiO2 coating layer on the silicon substrate and an Al2O3 coating layer are common to all the photodiodes, while the structure of the upper layers are modified with respect to the wavelength. Within an ultraviolet wavelength region, the coating structure is more finely changed with respect to the wavelength. By such a design, the transmittance can be improved while making the best efforts to avoid a complex manufacturing process.

摘要翻译： 以一维形式排列的多个光电二极管被分成多个组。 对于每组，改变抗反射涂层的结构，使得属于每个组的光电二极管的所有表面被具有透射特性的抗反射涂层覆盖，所述透射特性在其所接收的光的波长范围内显示最大透射率 光电二极管 特别地，硅衬底上的SiO 2涂层和Al 2 O 3涂层对于所有光电二极管是共同的，而上层的结构相对于波长被修饰。 在紫外线波长区域内，涂层结构相对于波长更细微地变化。 通过这样的设计，可以在尽量避免复杂的制造过程的同时，提高透射率。