公开(公告)号：US10886129B2

公开(公告)日：2021-01-05

申请号：US16318223

申请日：2017-07-03

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Tsuyoshi Ohtsuki ,  Tadashi Nakasugi ,  Hiroshi Takeno ,  Katsuyoshi Suzuki

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/20 ,  H01L29/78

摘要： A method for manufacturing a semiconductor device, including forming a Fin structure on a semiconductor silicon substrate, performing ion implantation into the Fin structure, and subsequently performing recovery heat treatment on the semiconductor silicon substrate to recrystallize silicon of the Fin structure, wherein the Fin structure is processed so as not to have an end face of a {111} plane of the semiconductor silicon onto a sidewall of the Fin structure to be formed. It also includes a method for manufacturing a semiconductor device that is capable of preventing a defect from being introduced into a Fin structure when the Fin structure is subjected to ion implantation and recovery heat treatment.

公开(公告)号：US11408092B2

公开(公告)日：2022-08-09

申请号：US16962269

申请日：2018-12-25

申请人： SHIN-ETSU HANDOTAI CO., LTD.

发明人： Wei Feng Qu ,  Ken Sunakawa ,  Tadashi Nakasugi

IPC分类号： C30B1/02 ,  C30B33/02 ,  C30B29/06

摘要： A method for heat-treating a silicon single crystal wafer to control a BMD density thereof to achieve a predetermined BMD density by performing an RTA heat treatment on a silicon single crystal wafer composed of an Nv region in a nitriding atmosphere, and then performing a second heat treatment, the method including: formulating a relational equation for a relation between BMD density and RTA temperature in advance; and determining an RTA temperature for achieving the predetermined BMD density according to the relational equation. Consequently, a method for heat-treating a silicon single crystal wafer for manufacturing an annealed wafer or an epitaxial wafer each having defect-free surface and a predetermined BMD density in a bulk portion thereof.