-
公开(公告)号：US20220254607A1
公开(公告)日：2022-08-11
申请号：US17611754
申请日：2020-05-22
Applicant: SHOWA DENKO K.K.
Inventor： Daisuke SATO , Kaoru KAIBUKI , Yuki OKA
IPC: H01J37/32
Abstract: There is provided a plasma etching method having a high etching rate of a silicon nitride film. A plasma etching method includes an etching step of etching a silicon nitride film formed on a substrate (20) using plasma obtained by converting an etching gas containing iodine heptafluoride into plasma.
Search Results
1
records
(took 0.011 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
