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公开(公告)号:US3688152A
公开(公告)日:1972-08-29
申请号:US3688152D
申请日:1971-03-03
申请人: SIEMENS AG
摘要: A high power klystron including means for forming an electron beam, preferably a hollow electron beam, with a perveance which is greater than 3 and means for defining interaction paths including delay line type structures in resonator chambers as sections with extended interaction.
摘要翻译: 大功率速调管包括用于形成电子束(优选中空电子束)的装置,其中的电位大于3,并且用于在共振腔内定义相互作用路径(包括延迟线型结构)作为具有延伸相互作用的部分的装置。