公开(公告)号：US20220236205A1

公开(公告)日：2022-07-28

申请号：US17612603

申请日：2020-04-30

申请人： SILTRONIC AG

发明人： Michael BOY ,  Ludwig KOESTER ,  Elena SOYKA ,  Peter STORCK

IPC分类号： G01N25/72 ,  C30B29/06 ,  C30B33/02 ,  H01L21/66

摘要： Suitability of silicon wafers for use in device processing without generation of fatal defects is assessed by using SIRD to measure stress in a wafer cut from a piece of a crystal ingot after first and second thermal treatments of the water, the second thermal treatment consisting of a heating phase, a holding phase, and a cooling phase. The result is used to consider whether silicon wafers cut from the piece can adequately survive device processing without generating excess defects.