公开(公告)号：US20220236205A1

公开(公告)日：2022-07-28

申请号：US17612603

申请日：2020-04-30

申请人： SILTRONIC AG

发明人： Michael BOY ,  Ludwig KOESTER ,  Elena SOYKA ,  Peter STORCK

IPC分类号： G01N25/72 ,  C30B29/06 ,  C30B33/02 ,  H01L21/66

摘要： Suitability of silicon wafers for use in device processing without generation of fatal defects is assessed by using SIRD to measure stress in a wafer cut from a piece of a crystal ingot after first and second thermal treatments of the water, the second thermal treatment consisting of a heating phase, a holding phase, and a cooling phase. The result is used to consider whether silicon wafers cut from the piece can adequately survive device processing without generating excess defects.

公开(公告)号：US20210111080A1

公开(公告)日：2021-04-15

申请号：US16981048

申请日：2019-03-13

申请人： SILTRONIC AG

发明人： Michael BOY ,  Christina KRUEGLER

IPC分类号： H01L21/66 ,  H01L21/324 ,  H01L21/67 ,  G01N21/21 ,  G01N21/95

摘要： Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.