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公开(公告)号：US20220231222A1
公开(公告)日：2022-07-21
申请号：US17716895
申请日：2022-04-08
Inventor： Woo Young PARK , Hyunchul SOHN , Jinyeol LEE , Taeho KIM
Abstract: The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer.
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2.发明申请RESISTIVE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME 审中-公开电阻记忆体装置和记忆装置及其数据处理系统公开(公告)号：US20140097397A1
公开(公告)日：2014-04-10
申请号：US13842919
申请日：2013-03-15
Applicant: SK HYNIX INC.
Inventor： Woo Young PARK , Kee Jeung LEE , Beom Yong KIM
IPC: H01L45/00
CPC classification number: H01L45/145 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1616
Abstract: A resistive memory device includes a first electrode layer, a second electrode layer, and a first variable resistive layer and a second variable resistive layer stacked at least once between the first electrode layer and the second electrode layer. The first variable resistive material layer may include a metal nitride layer having a resistivity higher than that of the first electrode layer or the second electrode layer and less than or equal to that of an insulating material.
Abstract translation: 电阻式存储器件包括在第一电极层和第二电极层之间至少堆叠一次的第一电极层，第二电极层以及第一可变电阻层和第二可变电阻层。 第一可变电阻材料层可以包括具有比第一电极层或第二电极层的电阻率高的电阻率的金属氮化物层，并且小于或等于绝缘材料的电阻率。
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公开(公告)号：US20210066583A1
公开(公告)日：2021-03-04
申请号：US17009560
申请日：2020-09-01
Inventor： Woo Young PARK , Hyunchul SOHN , Jinyeol LEE , Taeho KIM
Abstract: The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer.
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