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    SWITCHING DEVICE, AND RESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME AS A SELECTION DEVICE
    2.
    发明申请
    SWITCHING DEVICE, AND RESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME AS A SELECTION DEVICE 审中-公开

    公开(公告)号：US20180061889A1

    公开(公告)日：2018-03-01

    申请号：US15789712

    申请日：2017-10-20

    Applicant: SK hynix Inc.

    Inventor： Beom Yong KIM ,  Soo Gil KIM

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2427 ,  H01L27/2418 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

    Abstract: A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes.

    RESISTIVE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME
    5.
    发明申请
    RESISTIVE MEMORY DEVICE AND MEMORY APPARATUS AND DATA PROCESSING SYSTEM HAVING THE SAME 审中-公开
    电阻记忆体装置和记忆装置及其数据处理系统

    公开(公告)号：US20140097397A1

    公开(公告)日：2014-04-10

    申请号：US13842919

    申请日：2013-03-15

    Applicant: SK HYNIX INC.

    Inventor： Woo Young PARK ,  Kee Jeung LEE ,  Beom Yong KIM

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

    Abstract: A resistive memory device includes a first electrode layer, a second electrode layer, and a first variable resistive layer and a second variable resistive layer stacked at least once between the first electrode layer and the second electrode layer. The first variable resistive material layer may include a metal nitride layer having a resistivity higher than that of the first electrode layer or the second electrode layer and less than or equal to that of an insulating material.

    Abstract translation: 电阻式存储器件包括在第一电极层和第二电极层之间至少堆叠一次的第一电极层，第二电极层以及第一可变电阻层和第二可变电阻层。 第一可变电阻材料层可以包括具有比第一电极层或第二电极层的电阻率高的电阻率的金属氮化物层，并且小于或等于绝缘材料的电阻率。

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