公开(公告)号：US20220235485A1

公开(公告)日：2022-07-28

申请号：US17235809

申请日：2021-04-20

申请人： SK SILTRON CO., LTD.

发明人： Jung Ryul KIM

IPC分类号： C30B15/04 ,  B01D46/48 ,  B08B7/00

摘要： A method of oxidation-combusting an ingot grower comprises a) blocking between the filter housing and the exhaust pipe, b) forming the filter housing in a vacuum state, and c) injecting air into the filter housing through an injection pipe connected to a first side of the filter housing to combust the filter housing.

公开(公告)号：US20190211471A1

公开(公告)日：2019-07-11

申请号：US16242973

申请日：2019-01-08

申请人： SK SILTRON CO., LTD.

发明人： Hyun Woo PARK ,  Jung Ryul KIM

IPC分类号： C30B15/20 ,  C30B15/14 ,  C30B29/06 ,  G05B19/4155

CPC分类号： C30B15/206 ,  C30B15/14 ,  C30B29/06 ,  G05B19/4155 ,  G05B2219/50333

摘要： The present invention relates to a temperature control device for growing a single crystal ingot capable of accurately measuring a temperature of a silicon melt and quickly controlling to a target temperature during an ingot growing process, and a temperature control method applied thereto.The present invention provides a temperature control device for growing a single crystal ingot, which controls an operation of a heater for heating a crucible configured to accommodate a silicon melt, the device including: an input unit configured to measure a temperature of the silicon melt accommodated in the crucible and process the measured temperature of the silicon melt; a control unit configured to perform a proportional-integral-derivative (PID) calculation of one of the measured temperature T1 and the processing temperature T2 of the input unit and a set target temperature T0 and calculate as an output of the heater; and an output unit configured to input the output of the heater calculated in the control unit to the heater.