公开(公告)号：US10435809B2

公开(公告)日：2019-10-08

申请号：US15752719

申请日：2016-06-07

申请人： SK SILTRON CO., LTD.

发明人： Do-Won Song ,  Hong-Woo Lee ,  Sang-Hee Kim ,  Ho-Jun Lee ,  Jung-Ryul Kim

IPC分类号： C30B15/22 ,  C30B15/20 ,  C30B29/06 ,  C30B30/04 ,  C30B15/30

摘要： The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface. Accordingly, in the present invention, it is possible to reduce an Oi deviation and a BMD deviation in a longitudinal direction and a radial direction of a single crystal ingot, thereby improving quality.

公开(公告)号：US11214891B2

公开(公告)日：2022-01-04

申请号：US16554295

申请日：2019-08-28

申请人： SK SILTRON CO., LTD.

发明人： Do-Won Song ,  Hong-Woo Lee ,  Sang-Hee Kim ,  Ho-Jun Lee ,  Jung-Ryul Kim

IPC分类号： C30B15/22 ,  C30B29/06 ,  C30B15/20 ,  C30B15/30 ,  C30B30/04

摘要： The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface. Accordingly, in the present invention, it is possible to reduce an Oi deviation and a BMD deviation in a longitudinal direction and a radial direction of a single crystal ingot, thereby improving quality.