-
公开(公告)号：US10862033B2
公开(公告)日：2020-12-08
申请号：US16777608
申请日：2020-01-30
申请人： SK hynix Inc.
发明人： Kyoung Su Choi
摘要： An electronic device includes a semiconductor memory, wherein the semiconductor memory comprises a plurality of memory stacks neighboring each other in a first direction and a second direction, the second direction intersecting the first direction, a plurality of first liner layers covering sidewalls of memory stacks that neighbor each other in the second direction, the plurality of first liner layers extending in the second direction, a plurality of first air gaps located in spaces covered by the first liner layers, and a plurality of second air gaps located between each pair of memory stacks that neighbor each other in the first direction, the plurality of second air gaps extending in the second direction.
-
公开(公告)号：US10593878B2
公开(公告)日：2020-03-17
申请号：US16107338
申请日：2018-08-21
申请人： SK hynix Inc.
发明人： Kyoung Su Choi
摘要： An electronic device includes a semiconductor memory, wherein the semiconductor memory comprises a plurality of memory stacks neighboring each other in a first direction and a second direction, the second direction intersecting the first direction, a plurality of first liner layers covering sidewalls of memory stacks that neighbor each other in the second direction, the plurality of first liner layers extending in the second direction, a plurality of first air gaps located in spaces covered by the first liner layers, and a plurality of second air gaps located between each pair of memory stacks that neighbor each other in the first direction, the plurality of second air gaps extending in the second direction.
-
搜索结果
2 条记录 (耗时 0.011 秒)
