公开(公告)号：US20250048651A1

公开(公告)日：2025-02-06

申请号：US18428376

申请日：2024-01-31

Applicant: SK hynix Inc.

Inventor： Yoon Mo KOO ,  Hyung Dong LEE

IPC: H10B63/00 ,  H10B63/10

Abstract: A manufacturing method may include: forming first memory stack lines extending in a first direction; forming first access lines on the first memory stack lines to extend in a second direction intersecting the first direction, each first access line being electrically conductive to provide an electrical connection; forming a second memory stack on the first access lines; and forming first trenches extending between the first access lines to separate the second memory stack into second memory stack lines extending in the second direction, and to separate the first memory stack lines into first memory cells.