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公开(公告)号:US11877437B2
公开(公告)日:2024-01-16
申请号:US17374578
申请日:2021-07-13
申请人: SK hynix Inc.
发明人: Beom Ho Mun , Eun Jeong Kim , Jong Kook Park , Seung Mi Lee , Ji Won Choi , Kyoung Tak Kim , Yun Hyuck Ji
IPC分类号: H10B12/00
CPC分类号: H10B12/315 , H10B12/0335 , H10B12/34 , H10B12/482
摘要: A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.