公开(公告)号：US12279413B2

公开(公告)日：2025-04-15

申请号：US17591381

申请日：2022-02-02

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Hyunsoo Jin ,  Byung Jin Cho ,  Seongho Kim

IPC: H10B12/00 ,  H01G4/10 ,  H10D1/68

Abstract: Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.