公开(公告)号：US20230419089A1

公开(公告)日：2023-12-28

申请号：US18302772

申请日：2023-04-18

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Yang Kyu CHOI ,  Ji Man Yu

IPC: G06N3/063 ,  H10B43/20 ,  H10B43/40 ,  H01L29/78 ,  H01L29/792 ,  G11C11/54 ,  G11C16/04 ,  G06N3/049

CPC classification number: G06N3/063 ,  H10B43/20 ,  H10B43/40 ,  H01L29/785 ,  H01L29/792 ,  G11C11/54 ,  G11C16/0466 ,  G06N3/049

Abstract: A synaptic device, a neuromorphic device including the synaptic device, and operating methods thereof are disclosed. A synaptic device may comprise a channel, a charge trap layer directly contacting the channel, a blocking insulating layer disposed on the charge trap layer, a control electrode disposed on the blocking insulating layer, a first terminal connected to a first region of the channel, and a second terminal connected to a second region of the channel. The synaptic device may change a post-synaptic current (PSC) and control synaptic plasticity according to a control signal applied to the control electrode. The synaptic device may have a SONS (doped poly-silicon/blocking oxide/charge trap nitride/silicon channel) structure. The synaptic device may have SADP characteristics, SDDP characteristics, SFDP characteristics, SNDP characteristics, and STDP characteristics.