专利检索 ap:("SK hynix Inc." OR "Korea Advanced Institute of Science AND Technology") AND inv:"Sunyoung Jo" 第 1 页

1.

发明授权
Device for determining read reference voltage of a memory device and operating method thereof 有权

公开(公告)号：US12112813B2

公开(公告)日：2024-10-08

申请号：US17847056

申请日：2022-06-22

申请人： SK hynix Inc. , Korea Advanced Institute of Science and Technology

发明人： Sunyoung Jo , Jungwuk Park , Younghyun Park , Sang Ho Yun , Jaekyun Moon

IPC分类号： G11C16/34 , G06N3/045 , G11C16/28

CPC分类号： G11C16/3431 , G06N3/045 , G11C16/28

摘要： A device includes a threshold voltage distribution estimation network configured to generate an estimated distribution using a feature distribution and read trial information, a set of feature distributions generated from a plurality of threshold voltage distributions for a plurality of pages of a memory device, and a read reference voltage estimation network configured to generate a read reference voltage from the estimated distribution. The read trial information includes a read trial vector and an output value, the output value being generated by applying the read trial vector to a threshold voltage distribution for a page to be read among the plurality of threshold voltage distributions.