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公开(公告)号：US20220209110A1
公开(公告)日：2022-06-30
申请号：US17221616
申请日：2021-04-02
Applicant: SK hynix inc.
Inventor： Deok Lae AHN , Min Jin CHO , Won Ki JU
Abstract: An electronic device comprising a semiconductor memory including a plurality of memory cells is provided. Each of the plurality of memory cells includes: a first electrode layer; a variable resistance layer disposed over the first electrode layer; a second electrode layer disposed over the variable resistance layer; and an interface electrode layer interposed between the first electrode layer and the variable resistance layer or between the second electrode layer and the variable resistance layer. The interface electrode layer includes a porous metal-containing layer.
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