公开(公告)号：US11991878B2

公开(公告)日：2024-05-21

申请号：US18133693

申请日：2023-04-12

申请人： SK keyfoundry Inc.

发明人： Kwang Il Kim ,  Yang Beom Kang ,  Jung Hwan Lee ,  Min Kuck Cho ,  Hyun Chul Kim

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L29/788 ,  H10B41/10 ,  H10B41/43 ,  H10B41/44

CPC分类号： H10B41/43 ,  H01L29/66825 ,  H01L29/788 ,  H10B41/10 ,  H10B41/44

摘要： A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.