公开(公告)号：US11078599B2

公开(公告)日：2021-08-03

申请号：US16555583

申请日：2019-08-29

申请人： SKC Co., Ltd.

发明人： Byung Kyu Jang ,  Jung-Gyu Kim ,  Jung Woo Choi ,  Kap-Ryeol Ku ,  Sang Ki Ko

IPC分类号： C30B35/00 ,  C30B29/36 ,  C30B29/66

摘要： An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.

公开(公告)号：US10822720B1

公开(公告)日：2020-11-03

申请号：US16887263

申请日：2020-05-29

申请人： SKC Co., Ltd.

发明人： Jong Hwi Park ,  Myung-Ok Kyun ,  Sang Ki Ko ,  Kap-Ryeol Ku ,  Jung-Gyu Kim ,  Jongmin Shim ,  Byung Kyu Jang ,  Jung Woo Choi

IPC分类号： C30B23/00 ,  C30B29/36 ,  C30B25/08 ,  H01L21/02 ,  C30B19/08 ,  C30B35/00 ,  C30B25/10

摘要： A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.