公开(公告)号：US20200212238A1

公开(公告)日：2020-07-02

申请号：US16362665

申请日：2019-03-24

申请人： SOLARPAINT LTD.

发明人： Eran Maimon ,  Ramon Joseph Albalak ,  Oded Rozenberg ,  Esther Westreich

IPC分类号： H01L31/0392 ,  H01L31/042 ,  H01L31/18 ,  H01L27/142

摘要： Semiconductor substrates and semiconductor devices produced from such substrates, such as photovoltaic (PV) cells, may exhibit toughened physical characteristics making them more suitable for use in mechanically challenging or stressful environments. Semiconductor substrates and semiconductor devices produced from such substrates, such as photovoltaic (PV) cells, may exhibit toughened thermal characteristics making them more suitable for use in environmentally challenging applications. Semiconductor substrates and semiconductor devices produced from such substrates, such as photovoltaic (PV) cells, may exhibit sufficiently toughened characteristics and increase impact resistance to permit packaging in non-rigid and light weight encapsulating layer(s). Semiconductor substrates and semiconductor devices produced from such substrates may exhibit sufficient flexibility to permit for rolling up during shipment and or for non-destructive deformation during deployment over uneven surfaces. Semiconductor devices produced from such substrates may exhibit sufficient flexibility to permit repeated mechanical and/or thermal stresses without failure.

公开(公告)号：US11081606B2

公开(公告)日：2021-08-03

申请号：US16362665

申请日：2019-03-24

申请人： SOLARPAINT LTD.

发明人： Eran Maimon ,  Ramon Joseph Albalak ,  Oded Rozenberg ,  Esther Westreich

IPC分类号： H01L31/0392 ,  H01L27/142 ,  H01L31/18 ,  H01L31/042 ,  H01L31/054 ,  H01L31/0352

摘要： Semiconductor substrates and semiconductor devices produced from such substrates, such as photovoltaic (PV) cells, may exhibit toughened physical characteristics making them more suitable for use in mechanically challenging or stressful environments. Semiconductor substrates and semiconductor devices produced from such substrates, such as photovoltaic (PV) cells, may exhibit toughened thermal characteristics making them more suitable for use in environmentally challenging applications. Semiconductor substrates and semiconductor devices produced from such substrates, such as photovoltaic (PV) cells, may exhibit sufficiently toughened characteristics and increase impact resistance to permit packaging in non-rigid and light weight encapsulating layer(s). Semiconductor substrates and semiconductor devices produced from such substrates may exhibit sufficient flexibility to permit for rolling up during shipment and or for non-destructive deformation during deployment over uneven surfaces. Semiconductor devices produced from such substrates may exhibit sufficient flexibility to permit repeated mechanical and/or thermal stresses without failure.

公开(公告)号：US20240282874A1

公开(公告)日：2024-08-22

申请号：US18635039

申请日：2024-04-15

申请人： SOLARPAINT LTD.

发明人： Eran Maimon ,  Ramon Joseph Albalak ,  Oded Rozenberg ,  Esther Westreich

IPC分类号： H01L31/0445 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0445 ,  H01L31/022458 ,  H01L31/186

摘要： A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; and non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface, but reaches to a depth of between 50 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains between 1 to 50 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The non-transcending gaps in the semiconductor wafer are filled with an elastomer, and they absorb and dissipate mechanical forces.

公开(公告)号：US11978815B2

公开(公告)日：2024-05-07

申请号：US17353867

申请日：2021-06-22

申请人： SOLARPAINT LTD.

发明人： Eran Maimon ,  Ramon Joseph Albalak ,  Oded Rozenberg ,  Esther Westreich

IPC分类号： H01L31/0445 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0445 ,  H01L31/022458 ,  H01L31/186

摘要： A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; a set of non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface but reaches to a depth of between 80 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains at least 1 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The intact and non-penetrated thin layer of semiconductor wafer absorbs and dissipates mechanical forces.

公开(公告)号：US20210313478A1

公开(公告)日：2021-10-07

申请号：US17353867

申请日：2021-06-22

申请人： SOLARPAINT LTD.

发明人： Eran Maimon ,  Ramon Joseph Albalak ,  Oded Rozenberg ,  Esther Westreich

IPC分类号： H01L31/0445 ,  H01L31/0224 ,  H01L31/18

摘要： A flexible photovoltaic (PV) cell having enhanced properties of mechanical impact absorption, includes: a semiconductor wafer that is freestanding and carrier-less; having a thickness, and having a first surface, and a having second surface that is opposite to that first surface; a set of non-transcending gaps within the semiconductor wafer. Each non-transcending gap penetrates from the first surface towards the second surface but reaches to a depth of between 80 to 99 percent of the thickness of the semiconductor wafer, and does not reach said second surface. Each non-transcending gap does not entirely penetrate through an entirety of the thickness of the semiconductor wafer. The semiconductor wafer maintains at least 1 percent of the thickness of the semiconductor wafer as an intact and non-penetrated thin layer of semiconductor wafer that remains intact and non-penetrated by the non-transcending gaps. The intact and non-penetrated thin layer of semiconductor wafer absorbs and dissipates mechanical forces.