-
公开(公告)号:US20160230307A1
公开(公告)日:2016-08-11
申请号:US14614861
申请日:2015-02-05
CPC分类号: C30B11/10 , C30B11/006 , C30B29/06
摘要: Apparatus and method for a production of silicon ingots, such as crucible-less production of silicon ingots, where a support with a seed layer and a liquid layer is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer in a controlled way.
摘要翻译: 用于制造硅锭的装置和方法,例如无晶硅锭的生产,其中具有种子层和液体层的支撑在垂直梯度的温度场中逐渐降低,以将受控的液体层固化 办法。
-
公开(公告)号:US20140263524A1
公开(公告)日:2014-09-18
申请号:US13795896
申请日:2013-03-12
发明人: Nathan STODDARD , Bjoern SEIPEL
IPC分类号: B26F3/00
摘要: A method for cleaving wafers comprising the following steps: providing a slice of a crystalline material with at least a first plane side, providing at least one stressing means to be attached to said slice, wherein said at least one stressing means is at least in parts made of a material with a coefficient of thermal expansion different from that of the slice, attaching said stressing means to said first plane side of said slice to form a stack, inducing a thermal shear stress to said slice by applying a temperature change to said stack.
摘要翻译: 一种用于切割晶片的方法,包括以下步骤:提供具有至少第一平面侧的结晶材料切片,提供至少一个应力装置以附接到所述切片,其中所述至少一个应力装置是至少部分 由与所述切片不同的热膨胀系数的材料制成,将所述应力装置附接到所述切片的所述第一平面侧以形成堆叠,通过对所述堆叠施加温度变化来引起对所述切片的热剪切应力 。
-