公开(公告)号：US09487884B2

公开(公告)日：2016-11-08

申请号：US13698545

申请日：2011-05-23

申请人： Mikael T. Bjoerk ,  Heike E. Riel ,  Heinz Schmid

发明人： Mikael T. Bjoerk ,  Heike E. Riel ,  Heinz Schmid

IPC分类号： C30B15/02 ,  C30B11/12 ,  C30B11/10 ,  C30B13/18 ,  C30B15/08 ,  H01L31/18

CPC分类号： C30B15/08 ,  C30B11/003 ,  C30B11/02 ,  C30B11/10 ,  C30B11/12 ,  C30B13/18 ,  C30B15/002 ,  C30B21/06 ,  C30B29/06 ,  C30B29/64 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1032

摘要： A method for producing a mono-crystalline sheet includes providing at least two aperture elements forming a gap in between; providing a molten alloy including silicon in the gap; providing a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; providing a silicon nucleation crystal in the vicinity of the molten alloy; and bringing in contact said silicon nucleation crystal and the molten alloy. A device for producing a mono-crystalline sheet includes at least two aperture elements at a predetermined distance from each other, thereby forming a gap, and being adapted to be heated for holding a molten alloy including silicon by surface tension in the gap between the aperture elements; a precursor gas supply supplies a gaseous precursor medium comprising silicon in the vicinity of the molten alloy; and a positioning device for holding and moving a nucleation crystal in the vicinity of the molten alloy.

摘要翻译： 一种单晶片的制造方法包括提供在其间形成间隙的至少两个孔元件; 在间隙中提供包含硅的熔融合金; 在熔融合金附近提供包含硅的气态前体介质; 在熔融合金附近提供硅成核晶体; 并使所述硅成核晶体和熔融合金接触。 用于制造单晶片的装置包括彼此隔开预定距离的至少两个孔元件，从而形成间隙，并且适于被加热以在孔之间的间隙中通过表面张力保持包括硅的熔融合金 元素 前体气体供应在熔融合金附近供应包含硅的气态前体介质; 以及用于保持和移动熔融合金附近的成核晶体的定位装置。

公开(公告)号：US20130192518A1

公开(公告)日：2013-08-01

申请号：US13799288

申请日：2013-03-13

申请人： SILTRONIC AG

发明人： Wilfried von Ammon ,  Ludwig Altmannshofer ,  Helge Riemann ,  Joerg Fischer

IPC分类号： C30B11/00 ,  C30B11/10 ,  C30B11/02

CPC分类号： C30B11/006 ,  C30B11/001 ,  C30B11/003 ,  C30B11/02 ,  C30B11/10 ,  C30B13/08 ,  C30B13/20 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1088 ,  Y10T117/1092

摘要： A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.

摘要翻译： 半导体材料的单晶通过利用第一感应加热线圈在具有由半导体材料构成的流出管的盘子上熔化半导体材料颗粒的方法来制造，从而形成从运行中延伸的熔融颗粒的熔体 以熔体颈部的形式将熔融的腰部熔化成相边界，通过第二感应加热线圈向熔体输送热量，第二感应加热线圈具有熔体颈部通过的开口，使熔体在相边界处结晶 并且将冷却气体输送到流出管和熔融颈部，以便控制流出管和熔融颈部之间的界面的轴向位置。

公开(公告)号：US4820145A

公开(公告)日：1989-04-11

申请号：US926131

申请日：1986-11-03

申请人： Takashi Yokoyama ,  Ichiro Hide ,  Keiji Sawaya ,  Takeshi Matsuyama

发明人： Takashi Yokoyama ,  Ichiro Hide ,  Keiji Sawaya ,  Takeshi Matsuyama

IPC分类号： C30B11/00 ,  C30B11/10 ,  A01J21/00

CPC分类号： C30B11/10 ,  C30B11/00 ,  C30B11/002 ,  C30B11/008 ,  C30B29/605

摘要： A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.

摘要翻译： 一种多晶硅晶片，其特征在于，通过由所述托盘的旋转产生的离心力，使预定的气氛中的硅基材料的熔融液体在旋转的制造托盘上向径向流动的步骤，从而形成薄的熔融材料层 所需的直径与熔融液体固化并固化熔融材料，包括盖，顶盖上的通孔在其顶部被可分离地覆盖在托盘上，晶片模制空间形成为被盖和托盘包围 熔融材料经由通孔填充在晶片模制空间中以形成薄的熔融材料层。 因此，可以在不产生晶片表面的小突起的情况下同时形成晶片。

公开(公告)号：US4052782A

公开(公告)日：1977-10-11

申请号：US661778

申请日：1976-02-26

申请人： Harold Weinstein ,  Ray H. Lee

发明人： Harold Weinstein ,  Ray H. Lee

IPC分类号： C30B11/10 ,  C30B25/02 ,  F24S10/95 ,  F24S20/20 ,  F24S23/74 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/052 ,  B01J17/00

CPC分类号： C30B29/06 ,  C30B11/10 ,  C30B25/02 ,  F24J2/07 ,  F24J2/14 ,  F24J2/32 ,  H01L31/03365 ,  H01L31/035281 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/052 ,  H01L31/0547 ,  Y02E10/41 ,  Y02E10/44 ,  Y02E10/45 ,  Y02E10/52 ,  Y10S148/064 ,  Y10S148/12 ,  Y10S148/122 ,  Y10S148/152 ,  Y10S148/17

摘要： High efficiency, low cost solar energy conversation is facilitated by using tubular photovoltaic solar cells situated at the focus of a line-generated paraboloidal reflector. Advantageously each solar cell comprises a pair of concentric glass tubes that are hermetically sealed at the ends. A photovoltaic junction is formed over the entire inside surface of one of the concentric tubes. For example, this may comprise an inner electrically conductive film, contiguous layers of Cu.sub.2 S and CdS forming a heterojunction, and an outer film of optically transparent but electrically conductive material. The conductive films provide electrical connection to the junction via external contacts that are symmetrically disposed at the ends of the tubular cell.In other embodiments the photovoltaic junction is formed in a crystalline silicon layer that is grown in situ on one of the glass tubes. Techniques for promoting oriented semiconductor crystalline growth are disclosed. These include providing minute crystalline islands in a metal matrix to serve as growth centers, surface alignment using a wavy layer deposited at an actue angle onto the glass substrate, surface seeding and normalization growth atop a fluid-like thin film deposition substrate.

摘要翻译： 通过使用位于线生成的抛物面反射器的焦点处的管状光伏太阳能电池来促进高效率，低成本的太阳能对话。 有利地，每个太阳能电池包括在端部气密密封的一对同心玻璃管。 在一个同心管的整个内表面上形成光电连接点。 例如，这可以包括内部导电膜，形成异质结的Cu2S和CdS的邻接层和光学透明但导电材料的外部膜。 导电膜通过对称设置在管状电池端部的外部接触件提供与接头的电连接。

公开(公告)号：US3876382A

公开(公告)日：1975-04-08

申请号：US27166972

申请日：1972-07-14

申请人： SIEMENS AG

发明人： FALCKENBERG RICHARD

IPC分类号： C30B11/10 ,  B01J17/24

CPC分类号： C30B11/10 ,  Y10T117/1028

摘要： The method of producing spinel-type oxide monocrystals wherein the crystal being grown is subjected to a relatively large temperature gradient in its axial direction and a relatively small temperature gradient in its radial direction. The invention includes laterally deflecting hot flame gases immediately below the growth front of the crystal and establishing heat equilibrium around the crystal being grown so that upon cessation of the flame gases, no sudden temperature drop is experienced by the crystal and fracture thereof is avoided. The deflection is achieved by a deflection member composed of a material having thermal characteristics similar to sintered Al.sub.2 O.sub.3.

公开(公告)号：US3866142A

公开(公告)日：1975-02-11

申请号：US42245073

申请日：1973-12-06

申请人： ALLIED CHEM

发明人： CLINE CARL F ,  MORRIS ROBERT C

IPC分类号： C30B15/04 ,  C01F17/00 ,  C30B11/10 ,  C30B15/00 ,  C30B29/22 ,  H01S3/16

CPC分类号： C30B29/22 ,  C30B11/10 ,  C30B15/00 ,  H01S3/16

摘要： Novel single crystals of doped beryllium lanthanate having up to 50 atomic percent dopant substituted for lanthanum are provided which find advantageous use in optical applications and, in particular, as laser hosts.

摘要翻译： 提供了具有高达50原子百分比掺杂剂替代镧的掺杂铍镧系元素的新型单晶，其在光学应用中，特别是激光器主机中有利地使用。

公开(公告)号：US3607067A

公开(公告)日：1971-09-21

申请号：US3607067D

申请日：1970-02-09

申请人： SIEMENS AG

发明人： NICKL JULIUS

IPC分类号： C30B11/10 ,  C01B33/02

CPC分类号： C30B11/10

摘要： Described is an improvement in the method of producing filamentary monocrystals by precipitation of crystal substance from a vaporous compound in a reaction vessel at elevated temperature, which comprises supplying the reaction space in the vessel with a mist of droplets formed of seed material for the monocrystals to be produced, said droplet material having a melting point 50* to 500* C. below that of the monocrystals to be produced; maintaining said reaction space at a temperature between the respective melting points of said droplet material and said monocrystals; and contacting the vaporous compound in said reaction space with said mist of droplets, whereby filamentary monocrystals grow onto the droplets. Also described is apparatus for performing the method.

公开(公告)号：US3558196A

公开(公告)日：1971-01-26

申请号：US3558196D

申请日：1968-10-18

申请人： US AIR FORCE

发明人： SAMPSON JOHN L

IPC分类号： C30B11/10 ,  B65G53/40

CPC分类号： C30B11/10

摘要： A POWDER DISPENSING ASSEMBLY FOR DELIVERING POWDERED CRYSTAL GROWING CONSTITUENTS TO THE CRYSTAL FORMING ZONE OF A CONVENTINAL VERNEUIL CRYSTAL GROWING APPARATUS. THE ASSEMBLY COMPRISES A DUAL-CHAMBERED POWDER DISPENSING CONTAINER ROTATABLE ABOUT A HORIZONTAL AXIS AND ADAPTED TO BE POSITIONED VERTICALLY ABOVE A VERNEUIL BURNER FOR THE INTRODUCTION OF POWDERED FEED CONSTIUENTS TO THE CRYSTAL GROWING ZONE THEREOF.

公开(公告)号：US3446602A

公开(公告)日：1969-05-27

申请号：US3446602D

申请日：1966-11-09

申请人： NIPPON ELECTRIC CO

发明人： SHIROKI KENICHI ,  SAITO SEIICHI

IPC分类号： C30B11/10 ,  C30B29/26 ,  B01D9/00

CPC分类号： C30B11/10 ,  C30B29/26 ,  Y10T117/1008

公开(公告)号：US3442719A

公开(公告)日：1969-05-06

申请号：US3442719D

申请日：1968-05-24

申请人： NAT RES DEV

发明人： DRABBLE JOHN R ,  PALMER ANTHONY WILLIAM

IPC分类号： C30B11/00 ,  C30B11/10 ,  C30B13/08 ,  C30B13/16 ,  C30B23/00 ,  H01L7/00

CPC分类号： C30B23/005 ,  C30B11/00 ,  C30B11/003 ,  C30B11/005 ,  C30B11/10 ,  C30B13/08 ,  C30B13/16 ,  C30B29/16 ,  C30B29/24 ,  Y10S117/906

摘要： 1,171,005. Crystallizing cerium or lanthanum oxide. J. R. DRABBLE and A. W. PALMER. 16 May, 1968 [26 May, 1967], No. 24721/67. Heading B1S. [Also in Division Cl] A crystalline rod 14 of cerium or lanthanum oxide is grown on a cathode 11 from a molten zone 15 fed with material from a consumable anode 10 of the material during passage of an electric discharge from the cathode to the anode.. The cathode may be of the same material or of carbon capped therewith. The anode may be above (as shown) or below the cathode.