公开(公告)号：US11322534B2

公开(公告)日：2022-05-03

申请号：US17102238

申请日：2020-11-23

Applicant: SONY CORPORATION

Inventor： Masaaki Takizawa ,  Yasushi Tateshita ,  Takahiro Toyoshima ,  Takuya Toyofuku ,  Yorito Sakano ,  Motonobu Torii

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745

Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The present disclosure can be applied to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.