公开(公告)号：US10685998B2

公开(公告)日：2020-06-16

申请号：US15949678

申请日：2018-04-10

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma

IPC: H01L27/146

Abstract: A high degree of phase difference detection accuracy can be obtained using a phase difference pixel with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel which is a pixel for focal point detection and an image-capturing pixel which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer between a light shielding layer and a micro lens formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.

公开(公告)号：US11563050B2

公开(公告)日：2023-01-24

申请号：US16080575

申请日：2017-02-24

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma ,  Minoru Ishida

IPC: H01L27/146

Abstract: Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit and transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.

公开(公告)号：US11211410B2

公开(公告)日：2021-12-28

申请号：US16879522

申请日：2020-05-20

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma

IPC: H01L27/146

Abstract: A high degree of phase difference detection accuracy can be obtained using a phase difference pixel with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel which is a pixel for focal point detection and an image-capturing pixel which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer between a light shielding layer and a micro lens formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.

公开(公告)号：US11088186B2

公开(公告)日：2021-08-10

申请号：US16879522

申请日：2020-05-20

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma

IPC: H01L27/146

Abstract: A high degree of phase difference detection accuracy can be obtained using a phase difference pixel with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel which is a pixel for focal point detection and an image-capturing pixel which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer between a light shielding layer and a micro lens formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.

公开(公告)号：US09978786B2

公开(公告)日：2018-05-22

申请号：US14900242

申请日：2014-06-25

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: A high degree of phase difference detection accuracy can be obtained using a phase difference pixel (2B) with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel (2B) which is a pixel for focal point detection and an image-capturing pixel (2A) which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer (50) between a light shielding layer (47) and a micro lens (52) formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer (51) formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.

公开(公告)号：US11527568B2

公开(公告)日：2022-12-13

申请号：US16080575

申请日：2017-02-24

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma ,  Minoru Ishida

IPC: H01L27/146

Abstract: Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit and transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.

公开(公告)号：US20130214371A1

公开(公告)日：2013-08-22

申请号：US13763056

申请日：2013-02-08

Applicant: SONY CORPORATION

Inventor： Tomohiko Asatsuma ,  Jun Okuno ,  Ando Atsuhiro ,  Masashi Nakazawa ,  Iwao Sugiura ,  Ikue Mitsuhashi

IPC: H01L31/0232

CPC classification number: H01L31/02325 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14685 ,  H01L27/14689

Abstract: There is provided a solid-state imaging device including a pixel array unit in which a plurality of unit pixels each having a photoelectric converting unit to generate and store photocharges according to an amount of received light and a charge storage unit to store the photocharges are arranged on a semiconductor substrate. The charge storage unit is formed on a path along which light is incident on the photoelectric converting unit.

Abstract translation: 提供了一种固态成像装置，其包括像素阵列单元，其中，具有光电转换单元的多个单位像素根据接收光量产生和存储光电荷，并且存储光电荷的电荷存储单元 在半导体衬底上。 电荷存储单元形成在光入射到光电转换单元上的路径上。