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1.
公开(公告)号:US20190288040A1
公开(公告)日:2019-09-19
申请号:US16349759
申请日:2017-11-17
Applicant: SONY CORPORATION
Inventor: Yasuharu UJIIE , Masakazu MUROYAMA , Masashi BANDO , Masaki MURATA , Hideyuki KUMITA , Sachiko SAKAIGAWA , Shintarou HIRATA , Yuya KUMAGAI , Yu KATO
Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.
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2.
公开(公告)号:US20210134887A1
公开(公告)日:2021-05-06
申请号:US17096515
申请日:2020-11-12
Applicant: SONY CORPORATION
Inventor: Yasuharu UJIIE , Masakazu MUROYAMA , Masashi BANDO , Masaki MURATA , Hideyuki KUMITA , Sachiko SAKAIGAWA , Shintarou HIRATA , Yuya KUMAGAI , Yu KATO
Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.
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公开(公告)号:US20200295088A1
公开(公告)日:2020-09-17
申请号:US16648981
申请日:2018-09-07
Applicant: Sony Corporation , SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Yu KATO , Yuta INABA , Masato KANNO , Hideaki MOGI , Miki KIMIJIMA , Sae MIYAJI
Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
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公开(公告)号:US20230134972A1
公开(公告)日:2023-05-04
申请号:US18085101
申请日:2022-12-20
Applicant: Sony Corporation , SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Yu KATO , Yuta INABA , Masato KANNO , Hideaki MOGI , Miki KIMIJIMA , Sae MIYAJI
Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.
[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
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