Abstract:
A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1).
Abstract:
There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.
Abstract:
An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10−9 to 1.5×10−7 m:
Abstract:
There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.
Abstract:
An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).
Abstract:
A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode 21 and the second electrode 22. The photoelectric conversion material layer 30 is formed of the following structural formula (1).
Abstract:
A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.