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公开(公告)号:US20240030102A1
公开(公告)日:2024-01-25
申请号:US18256496
申请日:2021-12-02
Inventor: Hikaru OHIRA , Yoichiro FUJINAGA , Christopher WRIGHT , Jan Jasper VAN DEN BERG , Matthew LAWRENSON
IPC: H01L23/473 , H01L23/40 , H01L21/78 , H01L21/48 , H01L21/02
CPC classification number: H01L23/473 , H01L23/40 , H01L21/78 , H01L21/481 , H01L21/02112
Abstract: Conventional problems are solved by providing a cooling mechanism having a nanocapillary structure constituted by graphene, a semiconductor device including the cooling mechanism, a method for manufacturing the same, and an electronic device. A first metal layer, a first graphene layer formed on the first metal layer and having a nanocapillary channel, a second graphene layer joined to an upper surface of the nanocapillary channel to form an opening of a passage for a refrigerant, and a second metal layer covering the second graphene layer are included.
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公开(公告)号:US20230222738A1
公开(公告)日:2023-07-13
申请号:US17922919
申请日:2021-04-27
Applicant: SONY GROUP CORPORATION
Inventor: Junji OTSUKA , Matthew LAWRENSON , Harm CRONIE
CPC classification number: G06T19/006 , G02B27/017
Abstract: Provided is an information processing apparatus (500) including a control section (504) that dynamically changes each parameter related to display of a virtual object, the parameter controlling display of the virtual object on each display device according to a method of expressing an image, the method being assigned for display of the image to each of a plurality of display devices that display images related to the same virtual object.
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公开(公告)号:US20230298955A1
公开(公告)日:2023-09-21
申请号:US17916131
申请日:2021-03-05
Inventor: Shigekazu ISHII , Bernadette ELLIOTT-BOWMAN , Christopher WRIGHT , Timothy BEARD , Matthew LAWRENSON , Hirotaka KOBAYASHI , Hiroyuki SHIGETA
IPC: H01L23/31 , H01L23/498
CPC classification number: H01L23/315 , H01L23/3142 , H01L23/49816 , H01L2924/186
Abstract: A region of a sealing part is effectively utilized. -A semiconductor device includes a semiconductor element, a substrate, a sealing part, and a cavity region. The substrate included in this semiconductor device is disposed adjacent to a bottom surface of the semiconductor element. The sealing part included in this semiconductor device is formed in a shape that covers an upper surface that is a surface facing the bottom surface of the semiconductor element, and seals the semiconductor element. The cavity region included in this semiconductor device is a region disposed in the sealing part and formed with a cavity.
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