公开(公告)号：US12028612B2

公开(公告)日：2024-07-02

申请号：US17638318

申请日：2020-09-03

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION ,  SONY GROUP CORPORATION

发明人： Yusuke Murakawa ,  Hideaki Togashi ,  Yoshito Nagashima ,  Akira Furukawa ,  Yoshihiro Ando ,  Yasumasa Akutagawa ,  Taku Minoda ,  Hiroki Iwashita ,  Takahito Niwa ,  Sho Nishida ,  Mikio Ishimaru

IPC分类号： H04N23/67 ,  H01L27/146 ,  H04N25/704

CPC分类号： H04N23/672 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/1463 ,  H04N25/704

摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.