公开(公告)号：US20220254939A1

公开(公告)日：2022-08-11

申请号：US17629343

申请日：2019-09-11

Applicant: SOUTH CHINA NORMAL UNIVERSITY

Inventor： Richard NOTZEL

IPC: H01L29/885 ,  H01L29/20 ,  H01L21/02 ,  H01L29/66 ,  H02M7/06

Abstract: An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier are provided. The epitaxial wafer comprises a Si substrate layer; an insulating layer formed on the Si substrate layer; and a nitride semiconductor layer formed on a surface of the insulating layer facing away from the Si substrate layer; wherein the insulating layer has a thickness configured such that under a forward bias voltage, the insulating layer may allow electrons and holes to pass from one side to the other side of the insulating layer via quantum tunneling so as to allow a forward current flow.

公开(公告)号：US20220214298A1

公开(公告)日：2022-07-07

申请号：US17608973

申请日：2019-05-15

Applicant: SOUTH CHINA NORMAL UNIVERSITY

Inventor： Richard NOTZEL

IPC: G01N27/30 ,  H01L21/02

Abstract: Disclosed are an epitaxial wafer and a method of fabricating the same, and an electrochemical sensor, wherein the reference electrode comprises: a substrate (11); an InGaN layer (12) formed on a surface of the substrate (11) and having an In content between 20% and 60% so as to ensure that a transition from negatively charged surface states to positively charged surface states occurs within a composition range; and an InN layer (13) formed on a surface of the InGaN layer (12) facing away from the substrate (11) to act as a stabilization layer. The InGaN layer (12) with an In content between 20% and 60% allows generation of an electrochemical response independent of the concentration of a solution to be detected; and in addition, the InN layer (13) with a high density of intrinsic, positively charged surface states further improves the electrochemical stability of the reference electrode.