METHOD FOR PREDICTING DELAY AT MULTIPLE CORNERS FOR DIGITAL INTEGRATED CIRCUIT

    公开(公告)号:US20230195986A1

    公开(公告)日:2023-06-22

    申请号:US18010131

    申请日:2022-03-09

    Abstract: Disclosed in the present invention is a method for predicting a delay at multiple corners for a digital integrated circuit, which is applicable to the problem of timing signoff at multiple corners. In the aspect of feature engineering, a path delay relationship at adjacent corners is extracted by using a dilated convolutional neural network (Dilated CNN), and learning is performed by using a bi-directional long short-term memory model (Bi-directional Long Short-Term Memory, BLSTM) to obtain topology information of a path. Finally, prediction results of a path delay at a plurality of corners are obtained by using an output of a multi-gate mixture-of-experts network model (Multi-gate Mixture-of-Experts, MMoE). Compared with a conventional machine learning method, the present invention can achieve prediction with higher precision through more effective feature engineering processing in a case of low simulation overheads, and is of great significance for timing signoff at multiple corners of a digital integrated circuit.

    OPTIMIZATION METHOD FOR DIGITAL INTEGRATED CIRCUIT

    公开(公告)号:US20240265181A1

    公开(公告)日:2024-08-08

    申请号:US18571727

    申请日:2023-01-03

    CPC classification number: G06F30/337 G06F2119/06

    Abstract: An optimization method for a digital integrated circuit is provided. Under the precondition of satisfying certain timing constraints, circuit-level, path-level and gate cell-level features of a circuit are extracted to construct a leakage power optimization model, and optimization data from commercial circuit optimization tools is used to train the model to predict voltage threshold types of gate cells after circuit optimization, such that the circuit can be optimized by adjusting voltage thresholds of gate cells in a post-routing gate-level netlist, thus realizing the optimization objective of reducing leakage power.

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