公开(公告)号：US20150324499A1

公开(公告)日：2015-11-12

申请号：US14649661

申请日：2013-10-16

Applicant: SOUTHEAST UNIVERSITY

Inventor： Zaifa Zhou ,  Lili Shi

IPC: G06F17/50 ,  G06F17/10 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/20 ,  G06F17/10

Abstract: Disclosed is a hash fast marching method for simulation of surface evolution in a photoresist etching process, including: dividing a substrate into grids and determining an etching speed matrix, initializing a grid point time value, building a hash table and a minimum heap, marching forward and performing an update, and repeating the foregoing steps until a time value of a minimum root node is not smaller than a preset photoresist etching (photoresist development) time. In the invention method, calculation is performed only for grid points in a narrow band (NarrowBand) around the established surface, and this narrow band only has a width of one grid point, so that higher iteration efficiency is achieved.

Abstract translation: 公开了一种用于模拟光致抗蚀剂蚀刻工艺中的表面演化的散列快速行进方法，包括：将基板划分成网格并确定蚀刻速度矩阵，初始化网格点时间值，构建散列表和最小堆，前进 并执行更新，并且重复前述步骤，直到最小根节点的时间值不小于预设的光致抗蚀剂蚀刻（光致抗蚀剂显影）时间。 在本发明的方法中，仅对所建立的表面周围的窄带（NarrowBand）中的网格点进行计算，该窄带仅具有一个网格点的宽度，从而实现更高的迭代效率。