公开(公告)号：US20250122615A1

公开(公告)日：2025-04-17

申请号：US18752592

申请日：2024-06-24

Applicant: SPTS Technologies Limited

Inventor： Matthew EDMONDS ,  William ROYLE ,  Caitlin Lane JONES ,  Daniel GOMEZ-SANCHEZ ,  Kathrine CROOK ,  Constantine FRAGOS ,  James MCGRATH

IPC: C23C16/44 ,  C23C16/32 ,  C23C16/34

Abstract: A method of cleaning a chamber of a plasma processing device to remove depositions formed after the plasma processing device has been used to deposit a dielectric material including silicon and carbon by introducing a first cleaning gas mixture into the chamber through a first gas inlet in a first introducing step; generating a first plasma in the chamber from the first cleaning gas mixture in a first cleaning step; introducing a second cleaning gas mixture into a remote plasma source in a second introducing step; generating a second plasma in the remote plasma source from a second cleaning gas mixture in a remote plasma generating step; and performing a second cleaning step by allowing fluorine radicals from the second plasma to enter the chamber and introducing a third cleaning gas mixture into the chamber at the same time as the fluorine radicals from the second plasma.