公开(公告)号：US20240011159A1

公开(公告)日：2024-01-11

申请号：US18372123

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Stephen BURGESS ,  Kathrine CROOK ,  Daniel ARCHARD ,  William ROYLE ,  Euan Alasdair MORRISON

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/509 ,  C23C16/56 ,  C23C16/40

CPC classification number: C23C16/458 ,  C23C16/455 ,  C23C16/509 ,  C23C16/56 ,  C23C16/401

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US20250046604A1

公开(公告)日：2025-02-06

申请号：US18607494

申请日：2024-03-17

Applicant: SPTS Technologies Limited

Inventor： Giorgos ANTONIOU ,  Kathrine CROOK

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

Abstract: Plasma enhanced chemical vapour deposition (PECVD) is used to deposit silicon nitride onto a semiconductor substrate. A stack of silicon nitride layers are deposited onto a rear surface of the semiconductor substrate by PECVD. The stack of silicon nitride layers comprises at least four layers of silicon nitride which alternate between tensile layers which are subject to a tensile stress and compressive layers which are subject to a compressive stress.

公开(公告)号：US20250122615A1

公开(公告)日：2025-04-17

申请号：US18752592

申请日：2024-06-24

Applicant: SPTS Technologies Limited

Inventor： Matthew EDMONDS ,  William ROYLE ,  Caitlin Lane JONES ,  Daniel GOMEZ-SANCHEZ ,  Kathrine CROOK ,  Constantine FRAGOS ,  James MCGRATH

IPC: C23C16/44 ,  C23C16/32 ,  C23C16/34

Abstract: A method of cleaning a chamber of a plasma processing device to remove depositions formed after the plasma processing device has been used to deposit a dielectric material including silicon and carbon by introducing a first cleaning gas mixture into the chamber through a first gas inlet in a first introducing step; generating a first plasma in the chamber from the first cleaning gas mixture in a first cleaning step; introducing a second cleaning gas mixture into a remote plasma source in a second introducing step; generating a second plasma in the remote plasma source from a second cleaning gas mixture in a remote plasma generating step; and performing a second cleaning step by allowing fluorine radicals from the second plasma to enter the chamber and introducing a third cleaning gas mixture into the chamber at the same time as the fluorine radicals from the second plasma.