公开(公告)号：US20250046604A1

公开(公告)日：2025-02-06

申请号：US18607494

申请日：2024-03-17

Applicant: SPTS Technologies Limited

Inventor： Giorgos ANTONIOU ,  Kathrine CROOK

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

Abstract: Plasma enhanced chemical vapour deposition (PECVD) is used to deposit silicon nitride onto a semiconductor substrate. A stack of silicon nitride layers are deposited onto a rear surface of the semiconductor substrate by PECVD. The stack of silicon nitride layers comprises at least four layers of silicon nitride which alternate between tensile layers which are subject to a tensile stress and compressive layers which are subject to a compressive stress.