公开(公告)号：US20220199409A1

公开(公告)日：2022-06-23

申请号：US17548148

申请日：2021-12-10

Applicant: SPTS Technologies Limited

Inventor： Janet Hopkins ,  Simon Dawson

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683

Abstract: A metallic feature on a substrate is subjected to a plasma dicing process and is cleaned. The workpiece has a carrier sheet attached to a frame member. The carrier sheet carries the substrate. The workpiece is provided on a workpiece support disposed within a chamber of an inductively coupled plasma apparatus. A sputter etch step is performed, including introducing a sputter gas or gas mixture into the chamber and sustaining an inductively coupled plasma of the sputter gas or gas mixture so as to sputter etch the substrate. A chemical etch step also is performed, including introducing O2 gas and/or O3 gas) into the chamber and sustaining an inductively coupled plasma of the O2 and/or O3 gas) so as to chemically etch the substrate. The sputter etch step and chemical etch step can be repeated.