Temperature Sensor with Layered Architecture
    1.
    发明申请
    Temperature Sensor with Layered Architecture 有权
    具有分层结构的温度传感器

    公开(公告)号:US20150362380A1

    公开(公告)日:2015-12-17

    申请号:US14763613

    申请日:2014-02-10

    Applicant: ST-ERICSSON SA

    CPC classification number: G01K7/01 G01K7/015 G05F3/30

    Abstract: A temperature sensor includes two branches, each branch having at least a first transistor and a second transistor connected as diodes and cascaded, so that an emitter of the first transistor is connected to a collector of the second transistor of the same branch. The temperature source also includes a current source configured to provide a current to the two branches, and an analog-to-digital convertor. The analog-to-digital convertor is connected to capture a voltage between emitters of the first transistors or of the second transistors, and is configured to convert said voltage to a digital temperature signal.

    Abstract translation: 温度传感器包括两个分支,每个分支具有至少第一晶体管和连接为二极管并级联的第二晶体管,使得第一晶体管的发射极连接到同一分支的第二晶体管的集电极。 温度源还包括被配置为向两个分支提供电流的电流源和模拟 - 数字转换器。 连接模数转换器以捕获第一晶体管或第二晶体管的发射极之间的电压,并且被配置为将所述电压转换为数字温度信号。

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