公开(公告)号：US11935777B2

公开(公告)日：2024-03-19

申请号：US17457155

申请日：2021-12-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HyeonChul Lee ,  HunTeak Lee ,  HyunSu Tak ,  Wanil Lee ,  InHo Seo

IPC: H01L21/683 ,  H01L21/56 ,  H01L21/77

CPC classification number: H01L21/6835 ,  H01L21/561 ,  H01L21/77

Abstract: A semiconductor device is manufactured using a support base and a filling material formed on the support base. The filling material can be a plurality of protrusions or penetrable film. The protrusions are attached to the support base with an adhesive. The protrusions have a variety of shapes such as square frustum, conical frustum, three-sided pyramid with a flat top, four-sided rectangular body, and elongated square frustum. A semiconductor wafer is disposed over the support base with the filling material extending into openings in the semiconductor wafer. The openings in the semiconductor wafer can have slanted sidewalls, or a more complex shape such as ledges and vertical projections. The filling material may substantially fill the openings in the semiconductor wafer. The protrusions may partially fill the openings in the semiconductor wafer. The protrusions occupy at least a center of the openings in the semiconductor wafer.

公开(公告)号：US20230170242A1

公开(公告)日：2023-06-01

申请号：US17457155

申请日：2021-12-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HyeonChul Lee ,  HunTeak Lee ,  HyunSu Tak ,  Wanil Lee ,  InHo Seo

IPC: H01L21/683 ,  H01L21/77 ,  H01L21/56

CPC classification number: H01L21/6835 ,  H01L21/77 ,  H01L21/561

Abstract: A semiconductor device is manufactured using a support base and a filling material formed on the support base. The filling material can be a plurality of protrusions or penetrable film. The protrusions are attached to the support base with an adhesive. The protrusions have a variety of shapes such as square frustum, conical frustum, three-sided pyramid with a flat top, four-sided rectangular body, and elongated square frustum. A semiconductor wafer is disposed over the support base with the filling material extending into openings in the semiconductor wafer. The openings in the semiconductor wafer can have slanted sidewalls, or a more complex shape such as ledges and vertical projections. The filling material may substantially fill the openings in the semiconductor wafer. The protrusions may partially fill the openings in the semiconductor wafer. The protrusions occupy at least a center of the openings in the semiconductor wafer.