公开(公告)号：US20210305168A1

公开(公告)日：2021-09-30

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US20230402383A1

公开(公告)日：2023-12-14

申请号：US18451743

申请日：2023-08-17

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/31

CPC classification number: H01L23/53238 ,  H01L21/76838 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US11769730B2

公开(公告)日：2023-09-26

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76838 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.