公开(公告)号：US10804119B2

公开(公告)日：2020-10-13

申请号：US15459997

申请日：2017-03-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  KyungHwan Kim ,  WoonJae Beak ,  HunTeak Lee ,  InSang Yoon

IPC: H01L21/00 ,  H01L21/56 ,  H01L23/58 ,  H01L23/552 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L25/16

Abstract: A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

公开(公告)号：US20180269195A1

公开(公告)日：2018-09-20

申请号：US15459997

申请日：2017-03-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  KyungHwan Kim ,  WoonJae Beak ,  HunTeak Lee ,  InSang Yoon

IPC: H01L25/00 ,  H01L23/58 ,  H01L23/552 ,  H01L23/00 ,  H01L21/683 ,  H01L21/56

Abstract: A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

公开(公告)号：US20230402383A1

公开(公告)日：2023-12-14

申请号：US18451743

申请日：2023-08-17

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/31

CPC classification number: H01L23/53238 ,  H01L21/76838 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US11769730B2

公开(公告)日：2023-09-26

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76838 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US11309193B2

公开(公告)日：2022-04-19

申请号：US17010221

申请日：2020-09-02

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  KyungHwan Kim ,  WoonJae Beak ,  HunTeak Lee ,  InSang Yoon

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/58 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L25/16

Abstract: A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

公开(公告)号：US20210305168A1

公开(公告)日：2021-09-30

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.