公开(公告)号：US20180337082A1

公开(公告)日：2018-11-22

申请号：US15755860

申请日：2016-08-30

申请人： STC.UNM

发明人： Sanjay KRISHNA ,  Brianna KLEIN ,  Francesca CAVALLO ,  Seyedeh Marziyeh ZAMIRI

IPC分类号： H01L21/683 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/18 ,  H01L27/146

CPC分类号： H01L21/02631 ,  H01L21/02398 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02664 ,  H01L21/6835 ,  H01L2221/6835 ,  H01L2221/68368

摘要： A method for forming a semiconductor structure, includes: providing a host substrate; forming at least one sacrificial layer having two or more group-V species over the host substrate; forming at least one semiconductor layer over the at least one sacrificial layer; and transferring at least a portion of the at least one semiconductor layer from the host substrate onto an alternate substrate.