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公开(公告)号：US10249780B1
公开(公告)日：2019-04-02
申请号：US15424464
申请日：2017-02-03
Applicant: STC.UNM
Inventor： Ganesh Balakrishnan , Adam Alexander Hecht , Erin Ivey Vaughan
IPC: H01L21/00 , H01L31/08 , H01L31/18 , H01L31/0304 , H01L31/0216 , H01L31/0392
Abstract: Provided is a method of making a radiation detector, including: growing a thin film on a substrate. The substrate is a silicon substrate. The thin film includes aluminum antimony alloy (AlSb). The growing is epitaxial growth via ultra-high vacuum molecular beam epitaxy (UHV-MBE).
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