公开(公告)号：US20150137242A1

公开(公告)日：2015-05-21

申请号：US14605064

申请日：2015-01-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： DAVID BARGE ,  PIERRE MORIN

IPC: H01L29/06 ,  H01L27/12

CPC classification number: H01L29/0653 ,  H01L21/76283 ,  H01L27/1203

Abstract: An insulation wall separating transistors formed in a thin semiconductor layer resting on an insulating layer laid on a semiconductor substrate, this wall being formed of an insulating material and comprising a wall crossing the thin layer and the insulating layer and penetrating into the substrate, and lateral extensions extending in the substrate under the insulating layer.

Abstract translation: 一个绝缘壁，分离形成在半导体层上的薄的半导体层中的晶体管，该绝缘层位于半导体衬底上的绝缘层上，该壁由绝缘材料形成，并且包括与薄层交叉的壁和绝缘层并穿透到衬底中 在绝缘层下方的衬底中延伸的延伸部。